Grass-like alumina enhances transmittance and electrical conductivity of atomic layer deposited Al-doped ZnO for thermoelectric and TCO applications

نویسندگان

چکیده

Transparent thermoelectric materials enable the integration of sensing and energy harvesting devices on various surfaces such as windows user interfaces. A key constraint for device performance in applications is available surface area from which power should be harvested without compromising optical properties. Here, we demonstrate atomic layer deposition (ALD) aluminum doped zinc oxide (AZO), most prominent n-type material, grass-like alumina (GLA), a high-performance, low-cost antireflective coating. The conformal nature ALD process enables AZO growth to closely follow topography underlying GLA film, therefore providing an increased effective compared reference film grown directly plain glass. films show improved electrical conductivity attributed additional doping by GLA. effect pronounced at lower thicknesses, resulting 228% increase 80% factor 32 nm thick films. Moreover, GLA-AZO partly inherit behavior thus showing transparency Our results promote transparent with performance.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2....

متن کامل

Biocompatibility of atomic layer-deposited alumina thin films.

Presented in this paper is a study of the biocompatibility of an atomic layer-deposited (ALD) alumina (Al2O3) thin film and an ALD hydrophobic coating on standard glass cover slips. The pure ALD alumina coating exhibited a water contact angle of 55 degrees +/- 5 degrees attributed, in part, to a high concentration of -OH groups on the surface. In contrast, the hydrophobic coating (tridecafluoro...

متن کامل

Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was co...

متن کامل

Improved performance of organic light-emitting diodes fabricated on Al-doped ZnO anodes incorporating a homogeneous Al-doped ZnO buffer layer grown by atomic layer deposition.

In this work, we investigated the use of a homogeneous Al-doped zinc oxide (AZO) buffer layer to improve the performance of an organic light-emitting diode (OLED) device fabricated on an AZO anode. For this, 10-nm-thick AZO buffer layers with Al doping concentrations of 3.1, 4.1, and 5.1 at % were grown on 140-nm-thick AZO anode films containing 2.1 at % Al by atomic layer deposition. The elect...

متن کامل

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2023

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0146772